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2SK Datasheet PDF Download – N-Channel Silicon Power MOS-FET, 2SK data sheet. Part, 2SK Category. Description, N-channel Silicon Power Mos-fet. Company , Fuji Electric Corp. of America. Datasheet, Download 2SK datasheet. Part, 2SK Category. Description, N-channel Silicon Power Mos-fet. Company, Fuji Electric Corp. of America. Datasheet, Download 2SK datasheet.

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Skip to main content. Add to Watch list. Produst description The Field-Effect Transistor Datasyeet is a transistor that uses an electric field to control the shape and hence the conductivity of a channel of one type of charge carrier in a semiconductor material.

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(PDF) 2SK Datasheet PDF Download – N-Channel Silicon Power MOS-FET

Mouse over to zoom – Click to enlarge. Back to home page Return to top. This item will post to United Statesbut the seller hasn’t specified postage options. Please enter up to 7 characters for the postcode. Add to Watch list Watching. Drain – Source Voltage Vdss. Learn more – opens in a new window or tab. Add to basket. Learn More – opens in a new window or tab.

Please enter a valid postcode. Description Postage and payments. This item will be sent through the Global Shipping Programme and includes international tracking. Seller information semico1 This seller is currently away until 09 Jan,and isn’t processing orders at this time. Gate threshold voltage Vgs th. Learn More – opens in a new window or tab International postage and import charges paid to Pitney Bowes Inc. Learn More – opens in a new window or tab Any international postage is paid in part to Pitney Bowes Inc.

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See all semico1 has no other items for sale. The Field-Effect Transistor FET is a transistor that uses an electric field to control the shape and hence the conductivity of a channel of one type of charge carrier in a semiconductor material.

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2SK962 Datasheet

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No additional import charges on delivery. Take a look at our Returning an item help page for more details. Will usually dispatch within 2 working days of receiving cleared payment – opens in a new window or tab. Compared to the other power semiconductor devices, for example IGBT, Thyristor, its main advantages are high commutation speed and good efficiency at low voltages. Add to Watch list Watching Watch list is full. Drain-Source resistance Rds-on max.

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International postage and import charges paid to Pitney Bowes Inc. It shares with the IGBT an isolated gate that makes it easy to drive. Seller ships within 2 days after receiving cleared payment – opens in a new window or tab.